Lanthanum Hafnium Us20070037415

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  • It's Elemental - The Element Lanthanum

    The Element Lanthanum - Basic Physical and Historical Information

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  • Patent US8071452 - Atomic layer deposition of .

    There is provided an improved method for depositing thin films using precursors to deposit binary oxides by atomic layer deposition (ALD) techniques. Also disclosed ...

    Characteristics of lanthanum hafnium oxide .

    Lanthanum hafnium oxide (LHO) thin films were grown using an electron cyclotron resonance atomic layer deposition technique. Tetrakis(ethylmethylamino)hafnium .

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  • Lanthanum - Wikipedia

    Hafnium: Tantalum: Tungsten: ... was first found by the Swedish chemist Carl Gustav Mosander in 1839 as an impurity in cerium nitrate – hence the name lanthanum, ...

    Hafnium Oxide Lanthanum

    The impact of lanthanum hafnium oxide as a gate insulator on the performance of zinc oxide thin film transistors 667 which the dielectric constants of La2O3 and HfO2 are

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  • Solution-Derived Hafnium Lanthanum Oxide Films .

    Solution-Derived Hafnium Lanthanum Oxide Films Prepared Using Ion-Beam Irradiation and Their Applications as Alignment Layers for Twisted-Nematic Liquid Crystal Displays

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  • Patent US7411237 - Lanthanum hafnium oxide .

    Dielectric layers containing a lanthanum hafnium oxide layer, where the lanthanum hafnium oxide layer is arranged as a structure of one or more monolayers, provide an ...

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  • Patents - Google Books

    A gate dielectric containing LaAlO3 and method of fabricating a gate dielectric contained LaAlO3 produce a reliable gate dielectric having a thinner equivalent oxide ...

    Lanthanum | Podcast | Chemistry World

    Brian Clegg uncovers the secret world of lanthanum. ... And you can learn the history and uses of Hafnium that make this element ... A Chemistry World ...

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  • lanthanum hafnium containing

    Patent US20070037415 - Lanthanum hafnium oxide dielectrics. Dielectric layers containing a lanthanum hafnium oxide layer, where the lanthanum hafnium oxide layer is arranged as a structure of one or more monolayers, provide an ...

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  • Patent US20010030352 - Method for increasing .

    In a method for forming a trench capacitor a first layer of silicon oxide is deposited in a storage trench and a layer of silicon is deposited over the first layer by ...

    براءة الاختراع US20060128168 - Atomic layer .

    Atomic layer deposited dielectric layers containing a lanthanum hafnium oxide layer and methods of fabricating such dielectric layers provide an insulating layer in a ...

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    Brian Clegg uncovers the secret world of lanthanum. ... And you can learn the history and uses of Hafnium that make this element ... A Chemistry World ...

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    US20070037415 : Lanthanum hafnium oxide dielectrics Dielectric layers containing a lanthanum hafnium oxide layer, where the lanthanum hafnium ...

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    coupling an integrated circuit to the controller, wherein at least one of the integrated circuit or the controller includes a dielectric stack above a substrate, the ...

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  • Hafnium Boron Reaction

    Hafnium is a chemical element with symbol Hf and atomic number 72. A lustrous, silvery gray, tetravalent transition metal, hafnium chemically resembles zirconium ...

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  • Patent US20040110391 - Atomic layer deposited .

    Lanthanum oxide-based gate dielectrics for integrated circuit field effect ... Dielectric stack containing lanthanum and hafnium: US7923381: ... US20070037415 * 20 ...

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  • Lanthanum hafnium oxide dielectrics - .

    ) Inventor Kie Ahn Leonard Forbes Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or ...

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  • Lanthanum-Doped Hafnium Oxide: A Robust .

    Recently simulation groups have reported the lanthanide series elements as the dopants that have the strongest effect on the stabilization of the ferroelectric non ...

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  • Sintering Properties of Apatite-Type Lanthanum .

    Energy and Environmental Materials II: Sintering Properties of Apatite-Type Lanthanum Silicate Electrolytes

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  • Characteristics of lanthanum hafnium oxide .

    Lanthanum hafnium oxide (LHO) thin films were grown using an electron cyclotron resonance atomic layer deposition technique. Tetrakis(ethylmethylamino)hafnium .

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  • The impact of lanthanum hafnium oxide as a gate .

    The impact of lanthanum hafnium oxide as a gate insulator on the performance of zinc oxide thin film transistors 667 which the dielectric constants of La2O3 and HfO2 are

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  • Reactions of High-k Gate Dielectrics: Studies in .

    Title: Reactions of High-k Gate Dielectrics: Studies in Hafnium, Zirconium, Yttrium, and Lanthanum-based Dielectrics and in-situ Infrared Results for Hafnium Dioxide ...

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  • US7670646 - Methods for atomic-layer .

    Atomic-Layer deposition systems and methods provide a variety of electronic products. In an embodiment, a method uses an atomic-layer deposition system that includes ...

    NASA Technical Reports Server (NTRS) - .

    01/10/1971· Exploratory investigation of yttrium, lanthanum, and hafnium coatings for nitridation protection of chromium alloys: NTRS Full-Text: Click to View [PDF ...

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  • Patent US6808978 - Method for fabricating .

    US20070037415 * 20 Oct 2006: 15 Feb 2007: Micron Technology, Inc. Lanthanum hafnium oxide dielectrics: US20080043334 * 18 .

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  • Lanthanum»uses [WebElements Periodic Table]

    This WebElements periodic table page contains uses for the element lanthanum

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  • ALLOYING OF LANTHANUM HEXABORIDE .

    osti.gov journal article: alloying of lanthanum hexaboride with hafnium. ... hafnium borides; hafnium oxides; lanthanum borides; ...

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  • Patent US20070037415 - Lanthanum hafnium .

    Dielectric layers containing a lanthanum hafnium oxide layer, where the lanthanum hafnium oxide layer is arranged as a structure of one or more monolayers, provide an ...

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  • Patent US20030119246 - Low-temperature .

    Zirconium and/or hafnium oxynitride gate dielectric: ... Dielectric stack containing lanthanum and hafnium: US7960803: ... US20070037415 * 20 Oct 2006:

    Chemicool - Lanthanum

    Lanthanum's properties, discovery, chemistry, images, uses, videos, states, energies, appearance and characteristics.

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  • FPO IP Research & Communities - .

    US20070037415 : Lanthanum hafnium oxide dielectrics Dielectric layers containing a lanthanum hafnium oxide layer, where the lanthanum hafnium oxide layer is arranged as a structure of one or more monolayers, provide an insulating layer in a variety... 13 : .

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